Journal Papers

• Kashyap, S., Pandey, R., Madan, J., and Sharma, R., (2021). Process and device simulations aimed at improving the emitter region performance of silicon PERC solar cells. Journal of Micromechanics and Microengineering, IOP, 32, 025001 (13pp).
  DOI: https://doi.org/10.1088/1361-6439/ac404b
  Visit: https://iopscience.iop.org/article/10.1088/1361-6439/ac404b

• Shrivastav, N., Madan, J., Pandey, R., and Shalon, A.E., (2021). Investigations Aimed at Producing 33% Efficient Perovskite-Silicon Tandem Solar Cell Through Device Simulations. RSC Advances, 11, 37366-37374.
  DOI: 10.1039/d1ra06250f
  Visit: https://pubs.rsc.org/en/content/articlehtml/2021/ra/d1ra06250f

• Pandey, R., Sharma, S., Madan, J., and Sharma, R., (2021). Numerical Simulations of 22% Efficient All-Perovskite Tandem Solar Cell Utilizing Lead-Free and Low Lead Content Halide Perovskites. Journal of Micromechanics and Microengineering, IOP, 32, 014004.
  Visit:https://iopscience.iop.org/article/10.1088/1361-6439/ac34a0

• Madan, J., Singh, K., and Pandey, R., (2021). Comprehensive device simulation of 23.36% efficient two-terminal perovskite-PbS CQD tandem solar cell for low-cost applications. Scientific Reports, Nature, 11, 19829.
  DOI: https://www.nature.com/articles/s41598-021-99098-y
  Visit: https://www.nature.com/articles/s41598-021-99098-y

• Gohri, S. Madan, J., Pandey, R., and Sharma, R., (2021). Performance Analysis for SnS and Sn2S3 based Back Surface Field CZTSSe Solar Cell: A Simulation Study. Journal of Electronic Materials, Springer, 50, 6318-6328.
  DOI: https://doi.org/10.1007/s11664-021-09152-8
  Visit: https://link.springer.com/article/10.1007%2Fs11664-021-09152-8

• Shrivastav, N., Madan, J., Pandey, R. and Shalon, A.E., (2021). Investigations Aimed at Producing 33% Efficient Perovskite-Silicon Tandem Solar Cell Through Device Simulations. RSC Advances. Accepted

• Pandey, R., Sharma, S., Madan, J., and Sharma, R., (2021). Numerical Simulations of 22% Efficient All-Perovskite Tandem Solar Cell Utilizing Lead-Free and Low Lead Content Halide Perovskites. Journal of Micromechanics and Microengineering. Accepted

• Khanna, A., Pandey, R., Madan, J., and Dhingra, A. (2021). Comprehensive Device Simulation of 16.9% Efficient Two-terminal PbS-PbS CQD Tandem Solar Cell. Optical Materials, vol., 122, pp. 111677(1-9)
  DOI: https://doi.org/10.1016/j.optmat.2021.111677
  Visit:
  https://www.sciencedirect.com/science/article/pii/S0925346721008776

• Madan, J., Singh, K., and Pandey, R., (2021). Comprehensive device simulation of 23.36% efficient two-terminal perovskite-PbS CQD tandem solar cell for low-cost applications, vol. 11, pp. 19829,
  DOI: https://doi.org/10.1038/s41598-021-99098-y
  Visit:
  https://www.nature.com/articles/s41598-021-99098-y

• S. Gohri, J. Madan, R. Pandey* and R. Sharma, “Performance Analysis for SnS and Sn2S3 based Back Surface Field CZTSSe Solar Cell: A Simulation Study,” Journal of Electronic Materials.
  DOI: https://doi.org/10.1007/s11664-021-09152-8
  Visit:
  https://link.springer.com/article/10.1007%2Fs11664-021-09152-8

• Pandey, R., Madan, J., & Sharma, R. (2021). Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study. IEEE Transactions on Electron Devices, 68(4), 1757-1763. (In-Press)
  DOI: 10.1109/TED.2021.3057029
  Visit:
  https://ieeexplore.ieee.org/abstract/document/9359360

• Sharma, S., Pandey, R., Madan, J., & Sharma, R. (2021). Numerical simulation and proof of concept for performance assessment of cesium based lead-free wide-bandgap halide solar cells. Optical Materials, 111, 110644. (In-Press)
  DOI: : https://doi.org/10.1016/j.optmat.2020.110644
  Visit:
  https://www.sciencedirect.com/science/article/abs/pii/S0925346720309848

2021

• Pandey, R., Madan, J. and Sharma, R., (2021). Enhanced Charge Extraction in ‘Metal-Perovskite-Metal Back-Contact’ Solar Cell Structure Through Electrostatic Doping: A Numerical Study. IEEE Transactions on Electron Devices, (In press).
  DOI: 10.1109/TED.2021.3057029
  

2020

• Kashyap, S., Pandey, R., Madan, J., & Sharma, R., (2020). Design and Simulation of a-Si:H/PbS Colloidal Quantum Dots Monolithic Tandem Solar Cell for 12% Efficiency. Physica Status Solidi (a) Applications and Materials Science.
  DOI: https://doi.org/10.1002/pssa.202000252
  Visit:
  https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.202000252

• Pandey, R., Khanna, A., Singh, K., Patel, S. K., Singh, H., & Madan, J. (2020). Device simulations: Toward the design of >13% efficient PbS colloidal quantum dot solar cell. Solar Energy, 207, 893-902.
  DOI: https://doi.org/10.1016/j.solener.2020.06.099
  Visit:
  https://www.sciencedirect.com/science/article/abs/pii/S0038092X20307131

• Pathania, A., Pandey, R., Madan, J., & Sharma, R., (2020). Design and optimization of 26.3% efficient perovskite/FeSi2 monolithic tandem solar cell, Journal of Materials Science: Materials in Electronics, (Accepted)

• Pathania, A., Madan, J., Pandey, R. & Sharma, R., (2020). Effect of structural and temperature variations on perovskite/Mg 2 Si based monolithic tandem solar cell structure. Applied Physics A, 126(7), pp.1-12.
  DOI: https://doi.org/10.1007/s00339-020-03758-1
  Visit:
  https://link.springer.com/article/10.1007/s00339-020-03758-1

• Madan, J., Shivani, Pandey, R., & Sharma, R. (2020). Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell. Solar Energy, 197, 212-221.
  DOI: https://doi.org/10.1016/j.solener.2020.01.006
  Visit:
  https://www.sciencedirect.com/science/article/pii/S0038092X20300062

• Madan, J., Garg, S., Gupta, K., Rana, S., Manocha, A., & Pandey, R. (2020). Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts. Optik, 202, 163646.
  DOI: https://doi.org/10.1016/j.ijleo.2019.163646
  Visit:
  https://www.sciencedirect.com/science/article/pii/S003040261931544X

2019

• Pandey, R., Singla, A., Madan, J., Sharma, R., & Chaujar, R. (2019). Toward the design of monolithic 23.1% efficient hysteresis and moisture free perovskite/c-Si HJ tandem solar cell: a numerical simulation study. Journal of Micromechanics and Microengineering, 29(6), 064001.
  DOI: 10.1088/1361-6439/ab1512
  Visit:
  https://iopscience.iop.org/article/10.1088/1361-6439/ab1512/meta

CONFERENCE PAPERS

2021

• Kashyap, S., Madan, J.*, Pandey, R. and Sharma, R., (2021). Impact of Phosphorus Ion Implantation Dose on the Performance of PERC Solar Cell. in 2021 48th IEEE Photovoltaic Specialists Conference (PVSC), 2021, pp. 2247-2249.
  DOI: 10.1109/PVSC43889.2021.9518536.

• Kashyap, S., Madan, J.*, Pandey, R. and Sharma, R., (2021). Silicide Electrode based Electrostatically Doped Back Surface Field in PERC Solar Cell. In 2021 48th IEEE Photovoltaic Specialists Conference (PVSC), 2021, pp. 2386-2388,
  DOI: 10.1109/PVSC43889.2021.9518812.

• Khanna, A., Pandey, R., Madan, J.* and Dhingra, A., (2021). Thickness Optimisation and Defect Analysis of Wide Bandgap PbS-CQD Solar Cell by SCAPS-1D Simulations. in 2021 48th IEEE Photovoltaic Specialists Conference (PVSC), 2021, pp. 2191-2193.
  DOI: 10.1109/PVSC43889.2021.9518721.

• Gohri, S. Madan, J., Pandey, R., and Sharma, R., (2021). Assessment of WSe2 based BSF layer on CZTSSe solar cell using SCAPS-1D. in 2021 48th IEEE Photovoltaic Specialists Conference (PVSC), 2021, pp. 2020-2022.
  DOI: 10.1109/PVSC43889.2021.9518825.

• Sharma, S., Madan, J.*, Pandey, R., Sharma, R., (2021). Design and Optimization of Low Lead Content-Based Mixed Sn and Pb Perovskite Solar Cell for 19.46% Efficiency. in 2021 48th IEEE Photovoltaic Specialists Conference (PVSC), 2021, pp. 2116-2118.
  DOI: 10.1109/PVSC43889.2021.9518711.

• Khanna, A. Pandey, R., Madan, J.*, Dhingra, A., (2021). Numerical Simulation and Optimisation of Wide Bandgap (1.45eV) PbS-CQD Solar Cell for 14% Conversion Efficiency. in 2021 48th IEEE Photovoltaic Specialists Conference (PVSC), 2021, pp. 1890-1892,
  DOI: 10.1109/PVSC43889.2021.9518586.

• S. Sharma, J. Madan, R. Pandey and R. Sharma, “Design and Optimization of Low Lead Content-Based Mixed Sn and Pb Perovskite Solar Cell for 19.46% Efficiency,” In 48^th IEEE PVSC.
  DOI:10.1109/PVSC43889.2021.9518711
  Visit:
  https://ieeexplore.ieee.org/document/9518711

• S. Gohri, J. Madan, R. Pandey and R. Sharma, “Assessment of WSe2 based BSF layer on CZTSSe solar cell using SCAPS-1D,” In 48^th IEEE PVSC.
  DOI: 10.1109/PVSC43889.2021.9518825
  Visit:
  https://ieeexplore.ieee.org/document/9518825

• S. Kashyap, J. Madan, R. Pandey and R. Sharma, “Impact of Phosphorus Ion Implantation Dose on the Performance of PERC Solar Cell,” In 48^th IEEE PVSC.
  DOI:10.1109/PVSC43889.2021.9518536
  Visit:
  https://ieeexplore.ieee.org/document/9518536

• S. Kashyap, J. Madan, R. Pandey and R. Sharma, “Silicide Electrode based Electrostatically Doped Back Surface Field in PERC Solar Cell,” In 48^th IEEE PVSC.
  DOI:10.1109/PVSC43889.2021.9518812
  Visit:
  https://ieeexplore.ieee.org/document/9518812

• A. Khanna, R. Pandey, J. Madan and A. Dhingra, “Numerical Simulation and Optimisation of Wide Bandgap (1.45eV) PbS-CQD Solar Cell for 14% Conversion Efficiency,” In 48^th IEEE PVSC.
  DOI:10.1109/PVSC43889.2021.9518586
  Visit:
  https://ieeexplore.ieee.org/document/9518586

• A. Khanna, R. Pandey, J. Madan and A. Dhingra, “Thickness Optimisation and Defect Analysis of Wide Bandgap PbS-CQD Solar Cell by SCAPS-1D Simulations,” In 48^th IEEE PVSC.
  DOI:10.1109/PVSC43889.2021.9518721
  Visit:
  https://ieeexplore.ieee.org/document/9518721

• Sharma, S., Pandey, R., Madan, J., & Sharma, R. (2021, May). Optimization of Mixed Sn and Pb Perovskite Solar Cell in Terms of Transport Layers and Absorber Layer Thickness Variation. In 2021 Devices for Integrated Circuit (DevIC) (pp. 633-636). IEEE.
  DOI: https://doi.org/10.1109/DevIC50843.2021.9455886
  Visit:
  https://ieeexplore.ieee.org/abstract/document/9455886

2020

• Sharma, S., Gohri, S., Pandey, R., Madan, J., & Sharma, R. (2020, June). Device Simulation of Poly (3-Hexylthiophene) HTL Based Single and Double Halide Perovskite Solar Cells. In 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (pp. 2327-2330). IEEE.
  DOI: 10.1109/PVSC45281.2020.9300485
  Visit:
  https://ieeexplore.ieee.org/document/9300485

• Pathania, A., Pandey, R., Madan, J., & Sharma, R. (2020, June). Performance Evaluation of Lead-free Perovskite Solar Cell with Different Hole/Electron Transport Materials. In 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (pp. 2288-2291). IEEE.
  DOI: 10.1109/PVSC45281.2020.9300674
  Visit:
  https://ieeexplore.ieee.org/document/9300674

• Gohri, S., Sharma, S., Pandey, R., Madan, J., & Sharma, R. (2020, June). Influence of SnS and Sn 2 S 3 based BSF layers on the performance of CZTSSe solar cell. In 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (pp. 2300-2303). IEEE.
  DOI: 10.1109/PVSC45281.2020.9300852
  Visit:
  https://ieeexplore.ieee.org/document/9300852

• Kashyap, S., Madan, J., Pandey, R., & Sharma, R. (2020, June). Comprehensive Study on the Recent Development of PERC Solar Cell. In 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (pp. 2542-2546). IEEE.
  DOI: 10.1109/PVSC45281.2020.9300985
  Visit:
  https://ieeexplore.ieee.org/document/9300985

2019

• Pathania, A., Pandey, R., Madan, J., & Sharma, R. (2019, June). Design and Simulation of Novel Perovskite/Mg 2 Si Based Monolithic Tandem Solar Cell With 25.5% Conversion Efficiency. In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (pp. 1049-1051). IEEE.
  DOI: 10.1109/PVSC40753.2019.8980777
  Visit:
  https://ieeexplore.ieee.org/document/8980777

• Pandey, R., Madan, J., Sharma, R., & Chaujar, R. (2019, June). Numerical Simulations to Understand the Role of DIO Additive in PTB7: PC 71 BM Solar Cell. In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (pp. 0484-0486). IEEE.
  DOI: 10.1109/PVSC40753.2019.8980682
  Visit:
  https://ieeexplore.ieee.org/document/8980682

• Shivani, J. M., Pandey, R., & Sharma, R. (2019, June). Designing of CZTSSe Based SnS Thin Film Solar Cell for Improved Conversion Efficiency: A Simulation Study with SCAPS. In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (pp. 0193-0195). IEEE.
  DOI: 10.1109/PVSC40753.2019.8980459
  Visit:
  https://ieeexplore.ieee.org/document/8980459

2018

• Singla, A., Pandey, R., Sharma, R., Madan, J., Singh, K., Yadav, V. K., & Chaujar, R. (2018, November). Numerical Simulation of CeO x ETL based Perovskite Solar Cell:-An Optimization Study for High Efficiency and Stability. In 2018 IEEE Electron Devices Kolkata Conference (EDKCON) (pp. 278-282). IEEE.
  DOI: 10.1109/EDKCON.2018.8770401
  Visit:
  https://ieeexplore.ieee.org/document/8770401

• Arora, N., Pandey, R., Sharma, R., Madan, J., & Chaujar, R. (2018, November). Parametric Variation of ZnSe/TiO2 Electron Transport Layer Based Perovskite Solar Cell: A Simulation Study and Optimization. In 2018 IEEE Electron Devices Kolkata Conference (EDKCON) (pp. 428-432). IEEE.
  DOI: 10.1109/EDKCON.2018.8770451
  Visit:
  https://ieeexplore.ieee.org/document/8770451

Journal Papers

• Dassi, M., *Madan, J., Pandey, R., and Sharma, R., (2022). Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications. Journal of Materials Science: Materials in Electronics, Accepted.

• Dassi, M., *Madan, J., Pandey, R., and Sharma, R., (2021). Chemical modulation of conducting polymer gate electrode work function based double gate Mg2Si TFET for gas sensing applications. Journal of Materials Science: Materials in Electronics.
  DOI: 10.1007/s10854-021-07597-5
  Visit: https://link.springer.com/article/10.1007/s10854-021-07597-5

• P. Goyal, Madan, J.*, G. Srivastava, Pandey, R., and R.S. Gupta, (2021). Performance analysis of drain pocket hetero gate dielectric DG-TFET: Solution for ambipolar conduction and enhanced drive current. Silicon, Springer.
  DOI: 10.1007/s12633-021-01564-9
  Visit: https://link.springer.com/article/10.1007%2Fs12633-021-01564-9

• Sharma, P., *Madan, J., Pandey, R., and Sharma, R., (2021). Reliability Analysis of Cost-Efficient CH3NH3PbI3 based Dopingless Tunnel FET. Semiconductor Science and Technology, IOP, 37(1), 015011.
  DOI: https://doi.org/10.1088/1361-6641/ac38bb
  Visit: https://iopscience.iop.org/article/10.1088/1361-6641/ac38bb

• Dassi, M.,*Madan, J., Pandey, R., and Sharma, R., (2021). Impact of Interfacial Charges on Analog and RF Performance of Mg2Si Source Heterojunction Double Gate Tunnel Field Effect Transistor. Journal of Materials Science: Materials in Electronics, 32, 23863–23879.
  DOI: https://doi.org/10.1007/s10854-021-06823-4
  Visit: https://link.springer.com/article/10.1007%2Fs10854-021-06823-4

• Sharma, P., Madan, J., Pandey, R. and Sharma, R., (2021). Reliability Analysis of Cost-Efficient CH3NH3PbI3 based Dopingless Tunnel FET. Semiconductor Science and Technology. Accepted

• M. Dassi, J. Madan, R. Pandey, and R. Sharma, " Impact of Interfacial Charges on Analog and RF Performance of Mg2Si Source Heterojunction Double Gate Tunnel Field Effect Transistor," Journal of Materials Science: Materials in Electronics. (In Press)

• Sharma, P., Madan, J., Pandey, R., & Sharma, R. (2021). A methodical survey on present state of art for electrostatically-doped tunnel FETs and its future prospects. Materials Today: Proceedings, 45, 5381-5386. (In Press) DOI: https://doi.org/10.1016/j.matpr.2021.01.963
  Visit:
  https://www.sciencedirect.com/science/article/pii/S2214785321010695

2021

• Sharma, P., Madan, J., Pandey, R., & Sharma, R. (2021). Numerical simulations of a novel CH3NH3PbI3 based double-gate dopingless tunnel FET. Semiconductor Science and Technology, 36(5), 055008. DOI: https://doi.org/10.1088/1361-6641/abec13
  Visit:
  https://iopscience.iop.org/article/10.1088/1361-6641/abec13/meta

• Sharma, P., Madan, J., Pandey, R. and Sharma, R., (2021). A Methodical Survey on Present State of Art for Electrostatically-Doped Tunnel FETs and its Future Prospects. Materials Today: Proceedings, (In Press).

2020

• Sharma, P., Madan, J., Pandey, R. and Sharma, R., (2020). RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach. Journal of Electronic Materials, pp.1-17
  DOI: https://doi.org/10.1007/s11664-020-08538-4
  Visit:
  https://link.springer.com/article/10.1007/s11664-020-08538-4

• Dassi, M., Madan, J., Pandey, R., & Sharma, R., (2020). A Novel Source Material-Engineered DG-TFET for RFIC Applications. Semiconductor Science and Technology, IOP, 35(10), pp. 1-12.
  DOI: https://doi.org/10.1088/1361-6641/abaa5b
  Visit:
  https://iopscience.iop.org/article/10.1088/1361-6641/abaa5b/meta

• Dassi, M., Madan, J., Pandey, R. & Sharma, R., (2020). Effect of temperature on analog performance of Mg2Si source heterojunction double gate tunnel field effect transistor. Materials Today: Proceedings.
  DOI: https://doi.org/10.1016/j.matpr.2020.04.834
  Visit:
  https://www.sciencedirect.com/science/article/pii/S221478532033488X

• Madan, J., Pandey, R., Sharma, R., & Chaujar, R. (2020). Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET. Microsystem Technologies, Springer.
  DOI: https://doi.org/10.1007/s00542-020-04845-2
  Visit:
  https://link.springer.com/article/10.1007/s00542-020-04845-2

• Madan, J., Dassi, M., Pandey, R., Chaujar, R., & Sharma, R. (2020). Numerical analysis of Mg2Si/Si heterojunction DG-TFET for low power/high performance applications: Impact of non-idealities. Superlattices and Microstructures, 139, 106397.
  DOI: https://doi.org/10.1016/j.spmi.2020.106397
  Visit:
  https://www.sciencedirect.com/science/article/pii/S0749603619318774

• Madan, J., Pandey, R., & Chaujar, R. (2020). Conducting Polymer Based Gas Sensor Using PNIN-Gate All Around-Tunnel FET. Silicon, 1-9.
  DOI: https://doi.org/10.1007/s12633-020-00394-5
  Visit:
  https://link.springer.com/article/10.1007/s12633-020-00394-5

2019

• Madan, J., Pandey, R., Sharma, R., & Chaujar, R. (2019). Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET. Applied Physics A, 125(9), 600.
  DOI: 10.1007/s00339-019-2900-6
  Visit:
  https://link.springer.com/article/10.1007/s00339-019-2900-6

2018

• Shekhar, S., Madan, J., & Chaujar, R. (2018). Source/gate material-engineered double gate TFET for improved RF and linearity performance: a numerical simulation. Applied Physics A, 124(11), 739.
  DOI: 10.1007/s00339-018-2158-4
  Visit:
  https://link.springer.com/article/10.1007/s00339-018-2158-4

CONFERENCE PAPERS

2021

• Sharma, P., Madan, J.*, Pandey, R., Sharma, R., (2021). Impact of Ferroelectric Oxide Layer on Palladium Silicide Source Electrode based Double-Gate Junctionless TFET. pp.-229-232, 2021 Devices for Integrated Circuit (DevIC), 19-20 May, 2021, Kalyani, India.
  DOI: 10.1109/DevIC50843.2021.9455932

• Dassi, M., Madan, J., Pandey, R., & Sharma, R. (2021, May). Magnesium Silicide Source Double Palladium Metal Gate TFET for Highly Sensitive Hydrogen Gas Sensor. In 2021 Devices for Integrated Circuit (DevIC) (pp. 238-241). IEEE.
  DOI: https://doi.org/10.1109/DevIC50843.2021.9455761
  Visit:
  https://ieeexplore.ieee.org/abstract/document/9455761

• Sharma, P., Madan, J., Pandey, R., & Sharma, R. (2021, May). Impact of Ferroelectric Oxide Layer on Palladium Silicide Source Electrode based Double-Gate Junctionless TFET. In 2021 Devices for Integrated Circuit (DevIC) (pp. 229-232). IEEE
  DOI: https://doi.org/10.1109/DevIC50843.2021.9455932
  Visit:
  https://ieeexplore.ieee.org/abstract/document/9455932

2018

• Kaur, R., Madan, J., Sharma, R., Pandey, R., & Chaujar, R. (2018, November). Capacitive Analysis of Hetero Material Gate PNIN-DG-TFET Over Diverge Temperature Range for Superior RF/Microwave Performance. In 2018 IEEE Electron Devices Kolkata Conference (EDKCON) (pp. 252-257). IEEE.
  DOI: 10.1109/EDKCON.2018.8770491
  Visit:
  https://ieeexplore.ieee.org/document/8770491

• Madan, J., Kaur, R., Sharma, R., Pandey, R., & Chaujar, R. (2018, November). Electrical Characteristics Assessment of Gate Metal and Source Pocket Engineered DG-TFET for Low Power Analog Applications. In 2018 IEEE Electron Devices Kolkata Conference (EDKCON) (pp. 358-362). IEEE.
  DOI: 10.1109/EDKCON.2018.8770462
  Visit:
  https://ieeexplore.ieee.org/document/8770462

• Madan, J., Pandey, R., Arora, H., & Chaujar, R. (2018, November). Analysis of Varied Dielectrics as Surface Passivation on AlGaN/GaN HEMT for Analog Applications. In 2018 6th Edition of International Conference on Wireless Networks & Embedded Systems (WECON) (pp. 15-18). IEEE.
  DOI: 10.1109/WECON.2018.8782074
  Visit:
  https://ieeexplore.ieee.org/document/8782074

2017

• Duggal, D., Sharma, R., & Kapoor, B. (2017, April). Quantum confined model for a novel tri-material gate stack engineered double gate MOSFET. In 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 196-199). IEEE.
  DOI: https://doi.org/10.1109/ULIS.2017.7962560
  Visit:
  http://ieeexplore.ieee.org/document/7962560/

BOOK CHAPTER

2020

• Pandey R., Madan J., Sharma R., Dassi M., Chaujar R. Built-in Reliability Investigation of Gate-Drain Underlapped PNIN-GAA-TFET for Improved Linearity and Reduced Intermodulation Distortion. In: Sikander A., Acharjee D., Chanda C., Mondal P., Verma P. (eds) Energy Systems, Drives and Automations. Lecture Notes in Electrical Engineering, Vol 664. Springer, Singapore. Year 2020
  DOI: https://doi.org/10.1007/978-981-15-5089-8_19
  Visit:
  https://link.springer.com/chapter/10.1007/978-981-15-5089-8_19#citeas

Journal Papers

2021

• Thakur, D., Sharma, K., Kapila, S., & Sharma, R. (2021). Ultra-low power signal conditioning system for effective biopotential signal recording. Journal of Micromechanics and Microengineering, 31(12), 124005.
  DOI: 10.1088/1361-6439/ac3465
  Visit: https://iopscience.iop.org/article/10.1088/1361-6439/ac3465

• Saini, R., Sharma, K., & Sharma, R. (2021). A Low-Noise High-Gain Recycling Folded Cascode Operational Transconductance Amplifier Based on Gate Driven and Quasi-Floating Bulk Technique. Journal of Circuits, Systems and Computers, 2250099.
  DOI: https://doi.org/10.1142/S0218126622500992
  Visit: https://www.worldscientific.com/doi/abs/10.1142/S0218126622500992

• Saini, R., Sharma, K., and Sharma, R., (2021). A Low-Noise High-Gain Recycling Folded Cascode Operational Transconductance Amplifier Based on Gate Driven and Quasi-Floating Bulk Technique. Journal of Circuits, Systems, and Computers. Accepted.

• Thakur, D., Sharma, K., and Sharma, R., (2021). Ultra-low power signal conditioning system for effective biopotential signal recording. Journal of Micromechanics and Microengineering. Accepted

• Sharma, K., Pathania, A., Madan, J., Pandey, R., & Sharma, R. (2021). Process voltage temperature analysis of MOS based balanced pseudo-resistors for biomedical analog circuit applications. Circuit World.
  DOI: https://doi.org/10.1108/CW-08-2020-0213
  Visit::
  https://www.emerald.com/insight/content/doi/10.1108/CW-08-2020-0213/full/html

2020

• Sharma, K., Pathania, A., Pandey, R., Madan, J., and Sharma, R., (2020). MOS based Pseudo-resistors exhibiting Tera Ohms of Incremental Resistance for biomedical applications: Analysis and proof of concept, Integration, the VLSI Journal, 76, pp. 25-39.
  DOI: https://doi.org/10.1016/j.vlsi.2020.08.001
  Visit::
  https://www.sciencedirect.com/science/article/pii/S0167926020302625

• Sharma, K., Jamuar, S. S., & Sharma, R., (2020). Design and Simulation of Pseudo-resistor with extremely high linearity for an improved Neural signal recording. Review of Scientific Instruments, 91(6) 066102
  DOI: https://doi.org/10.1063/1.5125409
  Visit:
  https://aip.scitation.org/doi/10.1063/1.5125409

• Sharma, P., Sharma, K., Jatana, H. S., Madan, J., Pandey, R., & Sharma, R. (2020). A 1.1 µW biopotential amplifier based on bulk-driven quasi-floating gate technique with extremely low-value of offset voltage. Analog Integrated Circuits and Signal Processing. 103(2), 303.
  DOI: https://doi.org/10.1007/s10470-020-01623-y
  Visit:
  https://link.springer.com/article/10.1007%2Fs10470-020-01623-y

2019

• Sharma, K., & Sharma, R. (2019). Design considerations for effective neural signal sensing and amplification: a review. Biomedical Physics & Engineering Express, 5(4), 042001.
  DOI: https://doi.org/10.1088/2057-1976/ab1674
  Visit:
  https://iopscience.iop.org/article/10.1088/2057-1976/ab1674/pdf

CONFERENCE PAPERS

2021

• Sharma, S., Pandey, R., Madan, J.* and Sharma, R., (2021). Optimization of Mixed Sn and Pb Perovskite Solar Cell in Terms of Transport Layers and Absorber Layer Thickness Variation. pp.-633-636, 2021 Devices for Integrated Circuit (DevIC), 19-20 May, 2021, Kalyani, India.
  DOI: 10.1109/DevIC50843.2021.9455886

• Thakur, D., Sharma, K., & Sharma, R. (2021, May). Ultra Low-Power Low-Pass Filter Design for Wearable Biomedical Applications. In 2021 Devices for Integrated Circuit (DevIC) (pp. 629-632). IEEE.
  DOI: https://doi.org/10.1109/DevIC50843.2021.9455815
  Visit:
  https://ieeexplore.ieee.org/abstract/document/9455815

2020

• Sharma, K., Tripathi, R.K., Jatana, H.S., Pandey, R., Madan, J., Sharma, P. and Sharma, R., (2020). Current Reference Circuit Operable at Low Voltages Using Composite MOS Triode Resistor. In 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), (pp. 313-316). IEEE.
  DOI: 10.1109/VLSIDCS47293.2020.9179868
  Visit:
  https://ieeexplore.ieee.org/abstract/document/9179868

• Sharma, P., Sharma, K., Madan, J., Pandey, R., Jatana, H.S. and Sharma, R., (2020) A Low-Power g m-C Filter for Neural Signal Conditioning. In 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), (pp. 309-312). IEEE.
  DOI: 10.1109/VLSIDCS47293.2020.9179856
  Visit:
  https://ieeexplore.ieee.org/document/9179856

2019

• Singh, C. P., Pathania, A., Sharma, K., Madan, J., & Sharma, R. (2019, March). Design of an Integrator-Differentiator Block For a Transimpedance Amplifier Using 0.18 Technology. In 2019 Devices for Integrated Circuit (DevIC) (pp. 394-397). IEEE.
  DOI: https://doi.org/10.1109/DEVIC.2019.8783474
  Visit:
  https://ieeexplore.ieee.org/document/8783474

• Sharma, K., Pathania, A., & Sharma, R. (2019, March). Analytical modelling and simulation of pseudo-resistive circuit techniques for biomedical applications. In 2019 Devices for Integrated Circuit (DevIC) (pp. 390-393). IEEE.
  DOI: https://doi.org/10.1109/DEVIC.2019.8783406
  Visit:
  https://ieeexplore.ieee.org/document/8783406

• Sharma, P., Sharma, K., Jatana, H. S., & Sharma, R. (2019, March). A Low Power Biopotential Amplifier based on Bulk Driven Quasi Floating Gate Technique. In 2019 Devices for Integrated Circuit (DevIC) (pp. 424-427). IEEE.
  DOI: https://doi.org/10.1109/DEVIC.2019.8783245
  Visit:
  https://ieeexplore.ieee.org/document/8783245

2017

• Sharma, K., & Sharma, R. (2017, November). Highly consistent bulk driven quasi floating gate (BDQFG) PMOS pseudo-resistor design and implementation in 0.18 micron meter technology. In TENCON 2017-2017 IEEE Region 10 Conference (pp. 488-493). IEEE.
  DOI: 10.1109/TENCON.2017.8227913
  Visit:
  https://ieeexplore.ieee.org/document/8227913

Journal Papers

2021

• Juneja, S., Pratap, R. and Sharma, R. (2021) " Design Considerations for Implementation of Planar Antennas for Millimeter Wave (mmW) 5G Network: Review", Circuit World (In Press)

2020

• Juneja, S., Pratap, R. & Sharma, R., (2020). Semiconductor technologies for 5G implementation at millimeter wave frequencies–Design challenges and current state of work. Engineering Science and Technology, an International Journal.
  DOI: https://doi.org/10.1016/j.jestch.2020.06.012
  Visit:
  https://www.sciencedirect.com/science/article/pii/S2215098620300537

• Juneja, S. & Joshi, P., (2020). Design and development of a low cost and reliable writing aid for visually impaired based on Morse code communication. Technology and Disability, 32(2), pp.59-67.
  DOI: 10.3233/TAD-190257
  Visit:
  https://content.iospress.com/articles/technology-and-disability/tad190257

2019

• Juneja, S., & Sharma, R. (2019). Design of High Gain, High Reverse Isolation and High Input Matched Narrowband LNA for GPS L1 Band Applications Using 0.18 µm Technology. Iranian Journal of Electrical and Electronic Engineering, 15(4), 444-452.
  Visit:
  http://ijeee.iust.ac.ir/article-1-1427-en.pdf

2017

• Singh, R., Sharma, R., Krishna, C. R., & Vig, R. (2017, December). Energy analysis of two-tiered clustered architectures for smart world applications. In 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC) (pp. 746-749). IEEE.
  DOI: https://doi.org/10.1109/R10-HTC.2017.8289065
  Visit:
  https://ieeexplore.ieee.org/document/8289065

CONFERENCE PAPER

2021

• S. Juneja and R. Sharma, "Study of techniques to improve performance of patch antennas for 5G applications at millimeter wave (mmW) frequencies," in IOP Conference Series: Materials Science and Engineering, 2021, vol. 1022, no. 1, p. 01203
  DOI: https://doi.org/10.1088/1757-899X/1022/1/012033
  Visit:
  https://iopscience.iop.org/article/10.1088/1757-899X/1022/1/012033

CONFERENCE PAPER

2020

• Sharma, K., Sharma, Y., Mantri, A. & Sharma, R., (2020). Inculcating the spirit and passion for research among Engineering students at Undergraduate level. Procedia Computer Science, 172, 488.
  DOI: https://doi.org/10.1016/j.procs.2020.05.162
  Visit:
  https://www.sciencedirect.com/science/article/pii/S1877050920314927

• Sharma, P., Madan, J., Mann, S., Mantri, A. and Sharma, R., (2020). Studies on the Outcome and Relevance of Research in Artificial Intelligence Domain in South Asian Subcontinent. Procedia Computer Science, 172, pp.616-622.
  DOI: https://doi.org/10.1016/j.procs.2020.05.079
  Visit:
  https://www.sciencedirect.com/science/article/pii/S1877050920314083

• Juneja, S., Pandey, R., Arora, V., Sharma, R. and Mantri, A., (2020). Challenges faced in running ‘Train the Trainers’ program by industry professionals and possible solutions. Procedia Computer Science, 172, pp.427-432.
  DOI: https://doi.org/10.1016/j.procs.2020.05.094
  Visit:
  https://www.sciencedirect.com/science/article/pii/S187705092031423X

2017

• Juneja, S., Sharma, R., & Mantri, A. (2017, November). Strategic Partnership with Industry to Strengthen Core Competency in Electronics-Need, Opportunities, Challenges and Success Stories. In 2017 7th World Engineering Education Forum (WEEF) (pp. 562-567). IEEE.
  DOI: https://doi.org/10.1109/WEEF.2017.8467138
  Visit:
  https://ieeexplore.ieee.org/document/8467138